Hanghui Chen

Assistant Professor of Physics, NYU Shanghai
Global Network Assistant Professor, New York University

Email: hanghui.chen@nyu.edu
Group Website: www.hanghuichen.org

Hanghui Chen is an Assistant Professor of Physics at NYU Shanghai. Prior to joining NYU Shanghai, he was a post-doctoral fellow at Columbia University. He holds a Ph.D. from Yale University and a B.S. from Peking University.

Research Interests:

Professor Chen’s research interests include first-principles modelling and design of complex meta-materials, in particular transition metal oxide heterostructures; ab initio calculations of ground state and excited state properties of correlated systems; as well as method development in materials theory. His work has appeared in Phys. Rev. Lett., Nano Lett. and Advanced Materials.


  • Ph.D., Physics, Yale University, 2012
  • B.S., Physics, Peking University, 2004

Recent Publications:

  • H. Chen, D. P. Kumah, A. S. Disa, F. J. Walker, C. H. Ahn, S. Ismail-Beigi, “Modifying the electronic orbitals of nickelate heterostructures via structural distortions”, Phys. Rev. Lett. 110, 186402 (2013)  
  • H. Chen, A. J. Millis, and C. A. Marianetti, “Engineering Correlation Effects via Artificially Designed Oxide Superlattices”, Phys. Rev. Lett. 111,116403 (2013)
  • H. Chen, Q. Qiao, M. S. J. Marshall, A. B. Georgescu, A. Gulec, P. J. Phillips, R. F. Klie, F. J. Walker, C. H. Ahn and S. Ismail-Beigi, “Reversible modulation of orbital occupations via an interface-induced polar state in metallic manganites”, Nano Lett. 14, 4965 (2014).
  • A. S. Disa, D. P. Kumah, A. Malashevich, H. Chen, D. A. Arena, E. D. Specht, S. Ismail-Beigi, F. J. Walker and C. H. Ahn, “Inter-elemental orbital tuning in oxides”, Phys. Rev. Lett. 114, 026801 (2015).